Interfacialbonding and electronic structure of GaN/GaAs interface: A first-principlesstudy
Author
Publisher
Journal of Applied Physics
Date Issued
2015
Program
面上项目
Project ID
51171082
Sponsorship
基于氧化物稀磁半导体的新型磁性金属颗粒薄膜的巨霍尔效应及应用
Institution
南开大学
Recommend Citation
Please use this identifier to cite or link to this item:
http://or.nsfc.gov.cn/handle/00001903-5/280827
Fulltext
Downloaded Times:6
License

See the National Natural Science Foundation of China's policy on open access.